Title :
Theory and experiments on the 1/f surface noise of MOS insulated-gate field-effect transistors
fDate :
11/1/1964 12:00:00 AM
Keywords :
Diodes; Electrons; FETs; Fluctuations; Frequency; Insulation; Low-frequency noise; P-n junctions; Solid state circuits; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15412
