A new emitter design of InGaP/GaAs HBTs for high-frequency applications

Author

Hu, J. ; Zhang, Q.M. ; Surridge, R.K. ; Xu, J.M. ; Pavlidis, D.

Author_Institution

Bell-Northern Res., Ottawa, Ont., Canada

Volume

14

Issue

12

fYear

1993

Firstpage

563

Lastpage

565

Abstract

An HBT (heterojunction bipolar transistor) structure using an AlGaAs-InGaP emitter is proposed. The AlGaAs-InGaP configuration introduces an electron launcher in the emitter and makes use of the velocity overshoot effect. This enhances the emitter transport and reduces the electron accumulation in the emitter. Simulations show that, by using the AlGaAs-InGaP structure, the emitter charging time can be greatly reduced compared to the conventional AlGaAs emitter design. As a result, the cutoff frequency can be substantially increased. A cutoff frequency of 235 GHz has been predicted.<>

Keywords

III-V semiconductors; carrier mobility; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; solid-state microwave devices; 245 GHz; 2D device simulator; AlGaAs-InGaP; AlGaAs-InGaP emitter; InGaP-GaAs; InGaP/GaAs HBTs; Monte Carlo simulator; cutoff frequency; electron accumulation reduction; electron launcher; electron velocity profiles; emitter charging time; emitter design; emitter transport enhancement; heterojunction bipolar transistor; high-frequency applications; velocity overshoot effect; Capacitance; Conducting materials; Cutoff frequency; Degradation; Doping; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Monte Carlo methods;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.260790

Filename

260790