Title :
Gallium arsenide MOS and field-effect transistors
Author :
Hall, Rick ; White, Jonathan
fDate :
11/1/1964 12:00:00 AM
Keywords :
FETs; Fabrication; Frequency; Gallium arsenide; Insulation; Interface states; Silicon compounds; Tin; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15413
