DocumentCode

1023057

Title

Experiments on MOS devices at very low temperatures

Author

Brown, Justin M. ; Jordan, A.G.

Volume

11

Issue

11

fYear

1964

fDate

11/1/1964 12:00:00 AM

Firstpage

535

Lastpage

535

Keywords

FETs; Fabrication; Frequency; Insulation; Interface states; MOS devices; Silicon compounds; Temperature; Tin; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1964.15414

Filename

1473802