Title :
Experiments on MOS devices at very low temperatures
Author :
Brown, Justin M. ; Jordan, A.G.
fDate :
11/1/1964 12:00:00 AM
Keywords :
FETs; Fabrication; Frequency; Insulation; Interface states; MOS devices; Silicon compounds; Temperature; Tin; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15414
