Title :
Hall measurements of silicon FET structures
Author :
Fowler, A.B. ; Fang, F.F. ; Hochberg, F.
fDate :
11/1/1964 12:00:00 AM
Keywords :
FETs; Fabrication; Frequency; Insulation; Interface states; Silicon compounds; Substrates; Tin; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15415
