Title :
High-power 60 GHz monolithic GaAs impatt diodes
Author :
Bayraktaroglu, B. ; Shih, H.D.
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Abstract :
Monolithic GaAs impatt diodes were developed as CW power sources at 60 GHz using double-drift flat-profile structures prepared by MBE. Two mesa-type diodes were employed to excite a microstrip resonator produced on the same chip as the diodes. The oscillation frequency was determined by the microstrip dimensions and the diode locations rather than by external circuitry 1.2 W was obtained at 60 GHz with 8.5% efficiency, and a maximum efficiency of 10% was obtained at 58.5 GHz with 1.1 W output power without the use of diamond heat sinks.
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; microwave integrated circuits; molecular beam epitaxial growth; 1.2 W output power; 60 GHz; CW power sources; EMF; GaAs; III-V semiconductors; IMPATT diodes; MBE; MIC; MM-wave devices; diamond heat sinks; double-drift flat-profile structures; mesa-type diodes; microstrip resonator; microwave IC; millimetre-wave operation; solid-state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860383
