Title :
Caughey-Thomas parameters for electron mobility calculations in GaAs
Author :
Maziar, C.M. ; Lundstrom, M.S.
Author_Institution :
Purdue University, School of Electrical Engineering, West Lafayette, USA
Abstract :
The Caughey-Thomas expression, an empirically derived formulation for carrier mobility, is used here to relate carrier compensation to electron mobility. A set of equations expressing the Caughey-Thomas parameters as functions of the compensation ratio are presented. Use of these expressions reproduces results of theoretical low-field mobility computations and provides a simple means of incorporating effects of carrier compensation as well as concentration in device analysis programs.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; Caughey-Thomas expression; Caughey-Thomas parameters; GaAs; carrier compensation; carrier concentration; compensation ratio; device analysis programs; electron mobility; electron mobility calculations; empirically derived formulation; semiconductors; theoretical low-field mobility computation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860384
