DocumentCode
1023088
Title
Caughey-Thomas parameters for electron mobility calculations in GaAs
Author
Maziar, C.M. ; Lundstrom, M.S.
Author_Institution
Purdue University, School of Electrical Engineering, West Lafayette, USA
Volume
22
Issue
11
fYear
1986
Firstpage
565
Lastpage
566
Abstract
The Caughey-Thomas expression, an empirically derived formulation for carrier mobility, is used here to relate carrier compensation to electron mobility. A set of equations expressing the Caughey-Thomas parameters as functions of the compensation ratio are presented. Use of these expressions reproduces results of theoretical low-field mobility computations and provides a simple means of incorporating effects of carrier compensation as well as concentration in device analysis programs.
Keywords
III-V semiconductors; carrier mobility; gallium arsenide; Caughey-Thomas expression; Caughey-Thomas parameters; GaAs; carrier compensation; carrier concentration; compensation ratio; device analysis programs; electron mobility; electron mobility calculations; empirically derived formulation; semiconductors; theoretical low-field mobility computation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860384
Filename
4256580
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