A high-performance delta -doped GaAs/In/sub x/Ga/sub 1-x/As pseudomorphic high electron mobility transistor utilizing a graded In/sub x/Ga/sub 1-x/As channel

Author

Shieh, Hir-Ming ; Hsu, Wei-Chou ; Hsu, Rong-Tay ; Wu, Chang-Luen ; Wu, Tien-Shou

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

14

Issue

12

fYear

1993

Firstpage

581

Lastpage

583

Abstract

A delta -doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This structure had an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density a high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 mu m. The maximum transconductance versus gate bias extended over a broad and flat region of more than 2 V at 300 K. A low gate leakage current (<10 mu A at -7 V) at 300 K was obtained.<>

Keywords

III-V semiconductors; doping profiles; gallium arsenide; high electron mobility transistors; indium compounds; leakage currents; semiconductor growth; vapour phase epitaxial growth; 10 muA; 175 to 245 mS/mm; 2 micron; 77 to 300 K; GaAs-InGaAs-GaAs; delta -doped channel; gate leakage current; graded In composition; graded In/sub x/Ga/sub 1-x/As channel; high electron mobility transistor; low-pressure MOCVD; metalorganic chemical vapor deposition; pseudomorphic HEMT; Chemical vapor deposition; Current density; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Leakage current; MODFETs; PHEMTs; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.260796

Filename

260796