A model for a high-field triode

Author

Nathanson, H.C.

Volume

Issue

fYear

1964

fDate

11/1/1964 12:00:00 AM

Firstpage

535

Lastpage

535

Keywords

FETs; Fabrication; Frequency; Insulation; Interface states; Silicon compounds; Substrates; Tin; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1964.15420

Filename

1473808

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