مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1023123

Title :

A model for a high-field triode

Author :

Nathanson, H.C.

Volume :

Issue :

fYear :

1964

fDate :

11/1/1964 12:00:00 AM

Firstpage :

535

Lastpage :

535

Keywords :

FETs; Fabrication; Frequency; Insulation; Interface states; Silicon compounds; Substrates; Tin; Transconductance; Voltage;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1964.15420

Filename :

1473808

Link To Document :