Title :
Current components in GaAs el diodes
Author :
Engelmann, R.W.H. ; Herzog, A.H.
fDate :
11/1/1964 12:00:00 AM
Keywords :
Diodes; Doping; Electron emission; Etching; Gallium arsenide; Photonic band gap; Radiative recombination; Spontaneous emission; Temperature dependence; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15433
