DocumentCode
1023254
Title
Fabrication of an NpM GaInAs/InP bipolar transistor by a two-step epitaxial process
Author
Emeis, N. ; Beneking, H.
Author_Institution
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Volume
22
Issue
11
fYear
1986
Firstpage
590
Lastpage
591
Abstract
A two-step liquid-phase-epitaxial process has been used to fabricate widegap-emitter Schottky collector transistors. After the growth of the first two epitaxial layers the sample has been structured and then overgrown in a second run. In that way a pn homojunction in the widegap material (InP) underneath the extrinsic base-emitter region and a pn heterojunction under the collector have been formed. First transistors fabricated show a current gain of 10 in the common-emitter configuration.
Keywords
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; liquid phase epitaxial growth; p-n heterojunctions; LPE; N p M GaInAs/InP bipolar transistor; common-emitter configuration; current gain; extrinsic base-emitter region; liquid-phase-epitaxial process; p n heterojunction; semiconductors; two-step epitaxial process; widegap-emitter Schottky collector transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860401
Filename
4256597
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