Title :
The effect of deep levels due to copper on the optical and electrical properties of GaAs p-n junctions
Author :
Pilkuhn, M. ; Rupprecht, H.
fDate :
11/1/1964 12:00:00 AM
Keywords :
Alloying; Copper; Current measurement; Current-voltage characteristics; Diodes; Gallium arsenide; Impurities; P-n junctions; Tin; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15434
