Semidistributed model of millimeter-wave FET for parameter and noise figure predictions

Author

Escotte, Laurent ; Mollier, Jean-Claude

Author_Institution

IRCOM, Limoges, France

Volume

38

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

748

Lastpage

753

Abstract

An electrical FET model, derived from a partition of the actual transistor along its gate width into N identical sections, is presented. This sliced model has two important advantages compared to distributed models: first, the derivation of its element values is obtained by directly applying Kirchhoff´s laws, and second, inserting the noise sources is easy and makes possible the prediction of the FET noise parameters. An example that shows good agreement between minimum noise figures derived from the sliced model and from the Fukui formula in the range 18-40 GHz is given

Keywords

electron device noise; field effect transistors; semiconductor device models; solid-state microwave devices; 18 to 40 GHz; FET noise parameters; Fukui formula; Kirchhoff´s laws; electrical FET model; element values; gate width; millimeter-wave FET; minimum noise figures; noise figure predictions; noise sources; partition; sliced model; Differential equations; Electrodes; FETs; Frequency; MESFETs; Millimeter wave propagation; Millimeter wave transistors; Noise figure; Predictive models; Transmission lines;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.130969

Filename

130969