• DocumentCode
    1023365
  • Title

    SOI high-voltage device with step thickness sustained voltage layer

  • Author

    Luo, X. ; Zhang, B. ; Li, Z. ; Zhang, W. ; Zhan, Z. ; Xu, H.

  • Author_Institution
    Univ. of Electron. Sci. & Technol. of China, Chengdu
  • Volume
    44
  • Issue
    1
  • fYear
    2008
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    A new SOI high-voltage device with a step thickness sustained voltage layer (ST SOI) is proposed. The electric field in the drift region is modulated, and that in the buried layer is enhanced by the variable-thickness SOI layer, resulting in enhancement of breakdown voltage (BV). BV for the ST SOI with two steps is twice as high as that of the conventional SOI, maintaining the low on-resistance (Ron).
  • Keywords
    electric breakdown; silicon-on-insulator; SOI high-voltage device; breakdown voltage; drift region; electric field; step thickness sustained voltage layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20082131
  • Filename
    4415028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023365