Title :
SOI high-voltage device with step thickness sustained voltage layer
Author :
Luo, X. ; Zhang, B. ; Li, Z. ; Zhang, W. ; Zhan, Z. ; Xu, H.
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
A new SOI high-voltage device with a step thickness sustained voltage layer (ST SOI) is proposed. The electric field in the drift region is modulated, and that in the buried layer is enhanced by the variable-thickness SOI layer, resulting in enhancement of breakdown voltage (BV). BV for the ST SOI with two steps is twice as high as that of the conventional SOI, maintaining the low on-resistance (Ron).
Keywords :
electric breakdown; silicon-on-insulator; SOI high-voltage device; breakdown voltage; drift region; electric field; step thickness sustained voltage layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082131
