• DocumentCode
    1023367
  • Title

    Novel technique for deposition of hydrogenated amorphous silicon thin films

  • Author

    Robertson, P.A. ; Milne, W.I.

  • Author_Institution
    University of Cambridge, Engineering Department, Cambridge, UK
  • Volume
    22
  • Issue
    11
  • fYear
    1986
  • Firstpage
    603
  • Lastpage
    605
  • Abstract
    Amorphous silicon films have been deposited from the direct photoenhanced decomposition of monosilane. The use of a hydrogen discharge lamp within the reaction vessel obviates the need for mercury sensitisation. High deposition rates and material properties comparable to those or conventional plasma-enhanced CVD films have been achieved.
  • Keywords
    amorphous semiconductors; semiconductor growth; semiconductor thin films; silicon; H2 discharge lamp; UV lamp; a-Si:H thin film deposition; deposition rates; direct photoenhanced decomposition; material properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860410
  • Filename
    4256606