DocumentCode
1023367
Title
Novel technique for deposition of hydrogenated amorphous silicon thin films
Author
Robertson, P.A. ; Milne, W.I.
Author_Institution
University of Cambridge, Engineering Department, Cambridge, UK
Volume
22
Issue
11
fYear
1986
Firstpage
603
Lastpage
605
Abstract
Amorphous silicon films have been deposited from the direct photoenhanced decomposition of monosilane. The use of a hydrogen discharge lamp within the reaction vessel obviates the need for mercury sensitisation. High deposition rates and material properties comparable to those or conventional plasma-enhanced CVD films have been achieved.
Keywords
amorphous semiconductors; semiconductor growth; semiconductor thin films; silicon; H2 discharge lamp; UV lamp; a-Si:H thin film deposition; deposition rates; direct photoenhanced decomposition; material properties;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860410
Filename
4256606
Link To Document