Low-parasitic, planar Schottky diodes for millimeter-wave integrated circuits

Author

Archer, John W. ; Batchelor, Robert A. ; Smith, C.J.

Author_Institution

Div. of Radiophys., CSIRO, Epping, NSW, Australia

Volume

38

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

15

Lastpage

22

Abstract

The design and fabrication of air-bridged, ultra-low-capacitance Schottky barrier diodes are described. Mott diodes, for mixer applications, and varactor diodes, for use in frequency multipliers, have been produced simultaneously on epitaxial wafers grown by molecular beam epitaxy. Typical mixer diodes have a nominal anode contact area of 4 μm² and exhibit a total zero-bias capacitance of 4.0-4.5 fF (including a parasitic capacitance of approximately 1.0 fF) and a series resistance of 6-8 Ω. Diode chips have been incorporated in hybrid integrated circuit (MIC) mixers for 33-50 GHz and 75-110 GHz and an MIC frequency tripler for 90-140 GHz. Fully monolithic (MMIC) subharmonically pumped mixers for 75-110 GHz have also been fabricated and tested

Keywords

MMIC; Schottky-barrier diodes; frequency multipliers; hybrid integrated circuits; microwave integrated circuits; mixers (circuits); solid-state microwave devices; varactors; 1 fF; 33 to 140 GHz; 4 to 4.5 fF; 6 to 8 ohm; EHF; MBE grown wafers; MIC frequency tripler; MM-wave ICs; MMIC; Mott diodes; air-bridged; epitaxial wafers; fabrication; frequency multipliers; hybrid integrated circuit; low parasitic diodes; microwave devices; millimeter-wave integrated circuits; mixer applications; molecular beam epitaxy; monolithic IC; planar Schottky diodes; series resistance; subharmonically pumped mixers; ultra-low-capacitance; varactor diodes; zero-bias capacitance; Anodes; Contact resistance; Fabrication; Frequency; Microwave integrated circuits; Molecular beam epitaxial growth; Parasitic capacitance; Schottky barriers; Schottky diodes; Varactors;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.44151

Filename

44151