Coupled-wave small-signal transient analysis of GaAs distributed amplifier

Author

Han, Keli ; Wong, Thomas T Y

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA

Volume

38

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

23

Lastpage

29

Abstract

The analysis takes into consideration the effect of c_dg in the active device, leading to a coupled-mode formulation. Dispersions within the transmission lines and the presence of two normal modes make it impractical to obtain broadband matching. Numerical results for specific terminations and various degrees of passive and active coupling clearly indicate the influence of c _dg and the necessity for coupled-mode analysis. The numerical scheme, which is based on Bromwich integration, can be incorporated into CAD routines for time-domain response optimization

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit CAD; distributed parameter networks; equivalent circuits; gallium arsenide; integration; microwave amplifiers; time-domain analysis; transient response; Bromwich integration; CAD routines; GaAs; III-V semiconductors; MESFET; active coupling; coupled-mode analysis; distributed amplifier; microwave amplifiers; numerical scheme; passive coupling; small-signal transient analysis; time-domain response optimization; Coupled mode analysis; Couplings; Distributed amplifiers; Equations; Frequency domain analysis; Gallium arsenide; Pulse amplifiers; Time domain analysis; Transient analysis; Transmission line theory;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.44152

Filename

44152