DocumentCode :
1023541
Title :
Electronic interaction between impurities in the oxide film and the semiconductor substrate
Author :
Schmidt, Paul F.
Author_Institution :
Westinghouse Research Labs., Pittsburgh, Pa.
Volume :
12
Issue :
3
fYear :
1965
fDate :
3/1/1965 12:00:00 AM
Firstpage :
102
Lastpage :
104
Abstract :
Electronic interactions between impurities incorporated into the oxide film on silicon (or other semiconductors) and the semiconductor substrate are postulated. The impurities are presumed to change the Fermi level in the oxide, thus causing charge transfer between the oxide and the semiconductor surface. The anodic behavior of 
-type silicon contacting an electrolyte as a function of impurities incorporated into the oxide is suggested as experimental verification of this concept.
-type silicon contacting an electrolyte as a function of impurities incorporated into the oxide is suggested as experimental verification of this concept.Keywords :
Charge carrier processes; Charge transfer; Conductivity; Optical films; Protons; Semiconductor films; Semiconductor impurities; Silicon compounds; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1965.15463
Filename :
1473927
Link To Document :
