Title :
Optimisation of spacer layer thickness in n-AlxGa1-xAs/p+-GaAs heterojunction diodes grown by molecular beam epitaxy
Author :
Khamsehpour, B. ; Singer, K.E. ; van den Berg, J.A. ; Vickerman, J.C.
Author_Institution :
University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
Abstract :
The effect of an undoped GaAs spacer layer at the heterojunction interface of MBE-grown n-AlxGa1-xAs/p+-GaAs diodes has been investigated by electroluminescence, dynamic secondary ion mass spectrometry and current/voltage measurements. A consistent picture emerges of the role of the spacer layer in accommodating beryllium migration. A simple procedure to optimise the spacer layer thickness is suggested.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; p-n heterojunctions; Be migration; MBE-grown n-AlxGa1-xAs/ p+-GaAs diodes; current/voltage measurements; dynamic secondary ion mass spectrometry; electroluminescence; heterojunction diodes; heterojunction interface; optimisation; spacer layer thickness; undoped GaAs spacer layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860430
