DocumentCode :
1023565
Title :
Optimisation of spacer layer thickness in n-AlxGa1-xAs/p+-GaAs heterojunction diodes grown by molecular beam epitaxy
Author :
Khamsehpour, B. ; Singer, K.E. ; van den Berg, J.A. ; Vickerman, J.C.
Author_Institution :
University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
Volume :
22
Issue :
12
fYear :
1986
Firstpage :
627
Lastpage :
629
Abstract :
The effect of an undoped GaAs spacer layer at the heterojunction interface of MBE-grown n-AlxGa1-xAs/p+-GaAs diodes has been investigated by electroluminescence, dynamic secondary ion mass spectrometry and current/voltage measurements. A consistent picture emerges of the role of the spacer layer in accommodating beryllium migration. A simple procedure to optimise the spacer layer thickness is suggested.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; p-n heterojunctions; Be migration; MBE-grown n-AlxGa1-xAs/ p+-GaAs diodes; current/voltage measurements; dynamic secondary ion mass spectrometry; electroluminescence; heterojunction diodes; heterojunction interface; optimisation; spacer layer thickness; undoped GaAs spacer layer;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19860430
Filename :
4256628
Link To Document :
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