• DocumentCode
    1023617
  • Title

    The Effect of Electrode Layout on Nitride-Based Light-Emitting Diodes

  • Author

    Chiou, Yu-Zung

  • Author_Institution
    Dept. of Electron. Eng., Southern Taiwan Univ., Yongkang
  • Volume
    8
  • Issue
    4
  • fYear
    2008
  • Firstpage
    647
  • Lastpage
    651
  • Abstract
    Nitride-based light-emitting diodes (LEDs) with different electrode layouts were fabricated and analyzed. The turn-on voltage (V f) was proved to be highly related to the layout design of N-extending electrode. In addition, the electroluminescence intensity was almost proportional to the area of transparent contact layer (A TCL) subtracting the area of P-extending electrode (A P). Moreover, the current spreading was highly sensitive to the location and route of P- and N-extending electrodes. Good location and route can avoid thermal effect and damage. Finally, this paper proposed an easy and direct concept to estimate and predict the performance of nitride-based LEDs in turn-on voltage, electroluminescence intensity, and current spreading. It was highly potential to improve and change the currently mask design of nitride-based LEDs.
  • Keywords
    electrodes; electroluminescence; light emitting diodes; masks; LEDs; current spreading; electrode layouts; electroluminescence; light-emitting diodes; mask; transparent contact layer; turn-on voltage; Chemical vapor deposition; Electrodes; Electroluminescence; Etching; Gallium nitride; Light emitting diodes; Plasma applications; Quantum well devices; Rough surfaces; Voltage; Electrode; GaN; layouts; light-emitting diodes (LEDs); mask;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2008.2003181
  • Filename
    4700833