DocumentCode
1023628
Title
Low dark current GaAs/AlAs graded-parameter superlattice PIN photodetector
Author
Couch, N.R. ; Parker, D.G. ; Kelly, Michael J. ; Kerr, T.M.
Author_Institution
GEC Research Limited, Hirst Research Centre, Wembley, UK
Volume
22
Issue
12
fYear
1986
Firstpage
636
Lastpage
637
Abstract
Preliminary measurements of the photoresponse of a GaAs p-n junction containing an undoped asymmetric GaAs/AlAs superlattice are presented. Very low reverse-bias dark currents (<6×10¿8 A/cm2 at 3 V) are measured, while still retaining the speed and spectral response of a conventional GaAs PIN diode. The ¿3 dB bandwidth is found to be greater than 1 GHz, and the responsivity is 0.1 A/W.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; photodiodes; semiconductor superlattices; GaAs p- n junction; asymmetric GaAs/AlAs superlattice; bandwidth; graded superlattice; measurements; photodiodes; photoresponse; responsivity; reverse-bias dark currents; semiconductors; spectral response; speed; superlattice PIN photodetector;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860436
Filename
4256634
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