Title :
Monolithic integration of InGaAs/InP PIN PD with MISFET on stepless substrate
Author :
Ohtsuka, K. ; Sugimoto, Hiroshi ; Abe, Y. ; Matsui, Takashi ; Ogata, Hiroaki
Author_Institution :
Mitsubishi Electric Corporation, Central Research Laboratory, Amagasaki, Japan
Abstract :
A low-dark-current (1¿2 nA) InGaAs/InP single-heterostructure planar PIN PD was fabricated and integrated with an InP MISFET on stepless substrates. The characteristics of the PIN PD did not change with integration.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; monolithic integrated circuits; photodiodes; III-V semiconductors; InGaAs/InP; InP MISFET; MISFET; integrated optoelectronics; low-dark-current; monolithic integration; p-i-n device; photodiode; planar PIN; single-heterostructure; stepless substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860446
