Title :
Monolithic superconductor-base hot-electron transistors with large current gain
Author :
Kobayashi, Takehiko ; Sakai, Hiroki ; Tonouchi, Masayoshi
Author_Institution :
Osaka University, Faculty of Engineering Science, Toyonaka, Japan
Abstract :
A GaAs/Nb/InSb monolithic metal-base hot-electron transistor was newly developed and its transistor action was investigated. The common-base current amplification factor as high as 0.8 was attained for a 200 ¿-thick Nb base when the device was cooled down to the cryogenic temperature.
Keywords :
III-V semiconductors; bipolar transistors; cryogenics; gallium arsenide; hot carriers; indium antimonide; superconducting devices; GaAs/Nb/InSb; III-V semiconductor; Nb base; bipolar transistors; cryogenic temperature; hot-electron transistors; large current gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860451
