Title :
Spatially singlemode broad-area semiconductor laser with planar external cavity
Author :
Kolesnikov, M. ; Castillega, J. ; Bhandarkar, N. ; Stelmakh, N.
Author_Institution :
Photo-digm Inc., Richardson, TX, USA
fDate :
6/24/2004 12:00:00 AM
Abstract :
A broad-area laser diode combined with a planar external waveguide cavity operates in the fundamental mode and reshapes the output emission into a circular 15° beam. A 500 μm-long by 40 μm-wide laser diode with uncoated facets coupled with the uncoated ModeReShaper (MRS) planar chip has a coupling efficiency of ∼40% and stabilised the fundamental mode at drive currents up to three-times threshold.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; waveguide lasers; InGaAsP; broad-area laser diode; coupling efficiency; mode-reshaper planar chip; planar external waveguide cavity; singlemode semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045010
