• DocumentCode
    1023892
  • Title

    Polarisation-switching-induced resistance change in ferroelectric Mg-doped LiNbO3 single crystals

  • Author

    Mizuuchi, K. ; Morikawa, A. ; Sugita, T. ; Yamamoto, K.

  • Author_Institution
    Storage Media Syst. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
  • Volume
    40
  • Issue
    13
  • fYear
    2004
  • fDate
    6/24/2004 12:00:00 AM
  • Firstpage
    819
  • Lastpage
    820
  • Abstract
    Reversible resistance change at room temperature by polarisation switching is reported in ferroelectric single crystals. Resistance switching up to six orders of magnitude in Mg-doped LiNbO3 was found. The resistance change is caused by the polarisation switching and increases with Mg concentration. Based on these results, continuous switching properties and memory behaviours were demonstrated.
  • Keywords
    dielectric polarisation; doping profiles; ferroelectric materials; ferroelectric storage; ferroelectric switching; lithium compounds; magnesium; 293 to 298 K; LiNbO3:Mg; Mg concentration; continuous switching properties; ferroelectric Mg-doped LiNbO3 single crystals; memory behaviours; polarisation-switching-induced resistance change; reversible resistance change; room temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040515
  • Filename
    1309740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023892