Title :
Demonstration of 1.51μm inas/inp(3 1 1)B quantum dot single-mode laser operating under continuous wave
Author :
Moreau, G. ; Merghem, K. ; Martinez, A. ; Bouchoule, S. ; Ramdane, A. ; Grillot, F. ; Piron, R. ; Dehease, O. ; Homeyer, E. ; Tavernier, K. ; Loualiche, S. ; Berdaguer, P. ; Pommerau, F.
Author_Institution :
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis
fDate :
12/1/2007 12:00:00 AM
Abstract :
The achievement of a 1.51 mum InAs/InP(3 11)B quantum dot (QD) single-mode Fabry-Perot laser operating under continuous wave at room temperature is reported. A threshold current of 80 mA associated with a 0.12 W/A external efficiency is reported for as-cleaved device at room temperature. The maximum output power, the gain peak wavelength at threshold and the full width at half maximum of the spectral gain are 5 mW, 1512 nm and 60 nm, respectively. Although these performances must be improved in the future, these results constitute to our knowledge the state-of-the-art on InP(3 1 1)B substrate. These results are of great interest since QD-based lasers are expected to play a major role in the next generation telecommunication networks as low-cost devices.
Keywords :
Fabry-Perot resonators; indium compounds; semiconductor lasers; semiconductor quantum dots; InAs-InPB; continuous wave; current 80 mA; power 5 mW; quantum dot single mode laser; room temperature; single mode Fabry Perot laser; wavelength 1.51 mum; wavelength 1512 nm; wavelength 60 nm;
Journal_Title :
Optoelectronics, IET
DOI :
10.1049/iet-opt:20070037