• DocumentCode
    1023994
  • Title

    Effect of nonlinear gain on single-frequency behaviour of semiconductor lasers

  • Author

    Agarwal, G.P.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    22
  • Issue
    13
  • fYear
    1986
  • Firstpage
    696
  • Lastpage
    697
  • Abstract
    The effect of nonlinear gain on the single-frequency behaviour of semiconductor lasers is analysed using a two-mode rate-equation model. We find that the asymmetric nature of the nonlinear gain is responsible for bringing the sidemode above threshold when the power in the main mode exceeds a critical level. We obtain an analytic expression for the critical current density at which the sidemode reaches threshold and apply it to discuss the single-frequency range of distributed-feedback semiconductor lasers.
  • Keywords
    current density; distributed feedback lasers; laser modes; laser theory; semiconductor junction lasers; critical current density; distributed-feedback semiconductor lasers; main mode; nonlinear gain; semiconductor lasers; sidemode; single-frequency behaviour; two-mode rate-equation model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860476
  • Filename
    4256676