DocumentCode
1023994
Title
Effect of nonlinear gain on single-frequency behaviour of semiconductor lasers
Author
Agarwal, G.P.
Author_Institution
AT&T Bell Laboratories, Murray Hill, USA
Volume
22
Issue
13
fYear
1986
Firstpage
696
Lastpage
697
Abstract
The effect of nonlinear gain on the single-frequency behaviour of semiconductor lasers is analysed using a two-mode rate-equation model. We find that the asymmetric nature of the nonlinear gain is responsible for bringing the sidemode above threshold when the power in the main mode exceeds a critical level. We obtain an analytic expression for the critical current density at which the sidemode reaches threshold and apply it to discuss the single-frequency range of distributed-feedback semiconductor lasers.
Keywords
current density; distributed feedback lasers; laser modes; laser theory; semiconductor junction lasers; critical current density; distributed-feedback semiconductor lasers; main mode; nonlinear gain; semiconductor lasers; sidemode; single-frequency behaviour; two-mode rate-equation model;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860476
Filename
4256676
Link To Document