• DocumentCode
    1024009
  • Title

    Room-temperature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect

  • Author

    Saitoh, M. ; Hiramoto, T.

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Japan
  • Volume
    40
  • Issue
    13
  • fYear
    2004
  • fDate
    6/24/2004 12:00:00 AM
  • Firstpage
    836
  • Lastpage
    837
  • Abstract
    Novel highly-functional single-hole transistor (SHT) logic is proposed. An SHT is fabricated which shows Coulomb blockade and negative differential conductance (NDC) due to discrete quantum levels in the ultra-small dot at room temperature. By utilising gate-controllable NDC, exclusive-OR operation is successfully demonstrated in just one SHT at room temperature.
  • Keywords
    Coulomb blockade; MOSFET; logic devices; single electron transistors; 293 to 298 K; Coulomb blockade; MOSFET; OR operation; gate controllable negative differential conductance; highly functional single hole transistor logic; quantum mechanical effect; room temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040554
  • Filename
    1309751
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024009