Title :
Room-temperature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect
Author :
Saitoh, M. ; Hiramoto, T.
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Japan
fDate :
6/24/2004 12:00:00 AM
Abstract :
Novel highly-functional single-hole transistor (SHT) logic is proposed. An SHT is fabricated which shows Coulomb blockade and negative differential conductance (NDC) due to discrete quantum levels in the ultra-small dot at room temperature. By utilising gate-controllable NDC, exclusive-OR operation is successfully demonstrated in just one SHT at room temperature.
Keywords :
Coulomb blockade; MOSFET; logic devices; single electron transistors; 293 to 298 K; Coulomb blockade; MOSFET; OR operation; gate controllable negative differential conductance; highly functional single hole transistor logic; quantum mechanical effect; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040554
