Title :
Si/CoSi2/Si permeable base transistor obtained by silicon molecular beam epitaxy over a CoSi2 grating
Author :
Rosencher, E. ; Glastre, Genevieve ; Vincent, Gregory ; Vareille, G. ; D´avitaya, F.Arnaud
Author_Institution :
Centre National d´Etudes des Télécommunications, Meylan, France
Abstract :
Permeable base transistors have been fabricated by silicon molecular beam epitaxy over a CoSi2 grating, epitaxially grown on top of an Si wafer. The Si channel widths range from 4 ¿m down to 1 ¿m. Collector current/voltage characteristics are presented which exhibit the main expected features of an Si permeable base transistor.
Keywords :
bipolar transistors; cobalt compounds; elemental semiconductors; molecular beam epitaxial growth; semiconductor growth; silicon; CoSi2 grating; Si channel widths; Si wafer; Si/CoSi2/Si permeable base transistor; collector I-V characteristics; molecular beam epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860478
