Title :
Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 μm dilute nitride double-quantum-well lasers
Author :
MacKenzie, R. ; Lim, J.J. ; Bull, S. ; Chao, S. ; Sujecki, S. ; Sadeghi, M. ; Wang, S.M. ; Larsson, A. ; Melanen, P. ; Sipilä, P. ; Uusimaa, P. ; Larkins, E.C.
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. of Nottingham, Nottingham
fDate :
12/1/2007 12:00:00 AM
Abstract :
The net modal gain, effective group index and linewidth enhancement factor (LWEF) in edge-emitting InGaAsN/GaAs lasers have been determined as a function of both temperature and injection current from experimentally amplified spontaneous emission spectra. The shift of the peak gain with temperature was found to be 0.49 nm/K. Values of effective group index between 3.52 and 3.59 were measured, suggesting a relatively high refractive index of 3.75 for a dilute nitride quantum well. LWEF values between 1.87 and 2.84 were measured.
Keywords :
III-V semiconductors; quantum well lasers; spectral line breadth; superradiance; wide band gap semiconductors; InGaAsN-GaAs; dilute nitride double-quantum-well lasers; edge-emitting laser; effective group index; linewidth enhancement factor; optical gain measurement; spontaneous emission spectra amplification; wavelength 1.3 mum;
Journal_Title :
Optoelectronics, IET
DOI :
10.1049/iet-opt:20070035
