Title :
Emission of HF radiation in n+n(x)n+ GaAs devices under crossed electric and magnetic fields
Author_Institution :
Banaras Hindu University, Applied Physics Section, Institute of Technology, Varanasi, India
Abstract :
Physical arguments are presented to investigate the possibility of altering Landau levels by varying the doping density in the active n-layer in sandwiched n+n(x)n+ structures. Energy eigenvalues obtained from the solution of the Schrödinger equation provide the frequency range of possible radiation emission.
Keywords :
III-V semiconductors; Landau levels; gallium arsenide; high-frequency effects; microwave generation; semiconductor junctions; GaAs devices; HF radiation emission; III-V semiconductor; Landau levels; Schrodinger equation; active n-layer; crossed electric and magnetic fields; doping density; energy eigenvalues; harmonic oscillator; microwave generation; n+ n(x) n+ structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860483
