Title :
InGaAs/InAlAs SCH-MQW lasers with superlattice optical confinement layers grown by MBE
Author :
Kawamura, Y. ; Asai, H. ; Sakai, Y. ; Kotaka, I. ; Naganuma, M.
Author_Institution :
Opto-Electron. Lab., NTT, Kanagawa, Japan
Abstract :
InGaAs/InAlAs separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers with superlattice optical confinement layers grown by molecular beam epitaxy are discussed. Room-temperature operation with a low threshold current density of 1.7 kA/cm/sup 2/ at 1.537 mu m wavelength is obtained for these lasers.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; semiconductor superlattices; 1.537 micron; III-V semiconductor; InGaAs-InAlAs; InGaAs/InAlAs SCH-MQW lasers; MBE; low threshold current density; molecular beam epitaxy; multiple-quantum-well; room temperature operation; separate-confinement-heterostructure; superlattice optical confinement layers; High speed optical techniques; Indium compounds; Indium gallium arsenide; Molecular beam epitaxial growth; Optical buffering; Optical refraction; Optical superlattices; Optical variables control; Quantum well devices; Quantum well lasers;
Journal_Title :
Photonics Technology Letters, IEEE
