Title :
Room-temperature operation of MBE-grown InGaP/InGaAlP MQW visible laser diodes
Author :
Tanaka, Hiroya ; Kawamura, Yuriko ; Asahi, H.
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
Room-temperature pulsed operation has been achieved, for the first time, in InGaP/InGaAlP multiquantum-well (MQW) laser diodes grown by molecular beam epitaxy (MBE). This MQW laser is composed of 10 nm-thick InGaP well layers and 5 nm-thick InGaAlP barrier layers. The lasing wavelength was 658 nm. The threshold current density and T0 value were 7.6 kA/cm2 and 115 K, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; InGaAlP barrier layers; InGaP well layers; InGaP/InGaAlP MQW visible laser diodes; lasing wavelength 658 nm; molecular beam epitaxy; pulsed operation; room temperature operation; semiconductor laser; threshold current density 7.6 kA/cm2;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860484
