Title :
Effect of deposition temperature on LPCVD polysilicon
Author_Institution :
University of Southampton, Department of Electronics & Information Engineering, Southampton, UK
Abstract :
The electrical properties of LPCVD silicon are shown to be optimised for microelectronic applications by depositing the films as an amorphous layer and annealing to yield a polycrystalline form. The film resistivity is lowered and the piezoresistive coefficient raised by this technique. These improvements are explained by a simple theory which incorporates trap density and grain size effects and also allows the temperature coefficients of resistance and gauge factor to be calculated.
Keywords :
CVD coatings; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; grain size; piezoresistance; silicon; LPCVD; amorphous layer; annealing; deposition temperature; electrical properties; film resistivity; gauge factor; grain size; microelectronic applications; piezoresistive coefficient; polycrystalline Si; polysilicon; semiconductor; temperature coefficients of resistance; trap density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860490
