Title :
Monolithically integrated InGaAs/InP PIN-JFET photoreceiver
Author :
Wake, D. ; Scott, E.G. ; Henning, I.D.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
A vertically integrated InGaAs/InP PIN-JFET has been fabricated, in which separate layers are used for the FET channel and PIN intrinsic region. The maximum transconductance was 170 mS/mm, which is the highest reported figure for an integrated structure, and the photodiode quantum efficiency was 64% at ¿5 V and 1.53 ¿m wavelength, without antireflection-coating.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; junction gate field effect transistors; optical communication equipment; photodiodes; FET channel; InGaAs-InP PIN-JFET photoreceiver; PIN intrinsic region; monolithic integration; optical communication; photodiode quantum efficiency; transconductance 170 ms/mm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860492
