Title :
Planar embedded GaInAs photodiode on semi-insulating InP substrate for monolithic integration
Author :
Dawe, P.J.G. ; Spear, D.A.H. ; Thompson, G.H.B.
Author_Institution :
STC Technology Limited (STL), Harlow, UK
Abstract :
A back-illuminated planar embedded photodiode designed for integration into a high-bit-rate PINFET 1.2¿1.6 ¿m optical receiver has been fabricated by nonmasked LPE growth on a profiled substrate. A p-n¿-n+ structure provides low series resistance on both p- and n-sides. The electrical and optical performance is good, with a junction capacitance of 70 fF at ¿10 V.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; photodiodes; receivers; GaInAs photodiode; PINFET; low series resistance; monolithic integration; nonmasked LPE growth; optical performance; optical receiver; p- n-- n+ structure; planar embedded photodiode; semi-insulating InP substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860494
