Title :
Frequency-modulation characteristics of semiconductor lasers: deviation from theoretical prediction by rate equation analysis
Author :
Kikuchi, Kazuro ; Fukushima, Tetsuya ; Okoshi, Tadashi
Author_Institution :
University of Tokyo, Department of Electronic Engineering, Tokyo, Japan
Abstract :
The frequency modulation characteristics of 1.3 ¿m InGaAsP DFB BH lasers are measured when the bias current is slightly modulated by a sinusoidal waveform. Two deviations from the prediction by the rate equations are observed. One is that the phase difference between the frequency deviation and the modulation current approaches 180° below the relaxation resonance, and the other is that the ratio of the frequency modulation index to the amplitude modulation index has a strong frequency dependence. Both of the results are well explained by the two-section model, in which the inhomogeneous distribution of the spectral width enhancement factor ¿ is assumed.
Keywords :
III-V semiconductors; distributed feedback lasers; frequency modulation; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; DFB BH lasers; InGaAsP; amplitude modulation index; bias current; frequency modulation characteristics; inhomogeneous distribution; modulation current; rate equation analysis; semiconductor lasers; spectral width enhancement factor; two-section model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860510
