Title :
High electric field and pressure effects in n-CdTe, n-InAs, and N-InSb
Author :
Foyt, A.G. ; McWhorter, A.L. ; Paul, W.
fDate :
9/1/1965 12:00:00 AM
Keywords :
Diodes; Electrons; Gallium arsenide; Gunn devices; III-V semiconductor materials; Laboratories; Microwave devices; Pressure effects; Radar scattering; Telephony;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15544
