Title :
Active modes of interaction in bulk GaAs
Author :
Hakki, B.W. ; Knight, S. ; Uenohara, M.
fDate :
9/1/1965 12:00:00 AM
Keywords :
Diodes; Electrons; Gallium arsenide; Gunn devices; III-V semiconductor materials; Impurities; Laboratories; Microwave devices; Radar scattering; Telephony;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15546
