DocumentCode
1024381
Title
Wideband HEMT balanced amplifier
Author
Komiak, J.J.
Author_Institution
General Electric Company, Electronics Laboratory, Syracuse, USA
Volume
22
Issue
14
fYear
1986
Firstpage
747
Lastpage
749
Abstract
The high electron mobility transistor (HEMT) has demonstrated great potential for high-gain and low-noise applications, achieving a noise figure and current gain cutoff frequency fT superior to that of the GaAs MESFET. The letter presents the practical use of an HEMT in a hybrid wideband balanced amplifier covering 8.5 to 16 GHz producing 9.7 ± 0.5 dB gain and 2.6 dB midband noise figure. The performance is also compared to a GaAs MESFET stage.
Keywords
high electron mobility transistors; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; wideband amplifiers; 8.5 GHz to 16 GHz; GaAs MESFET; current gain cutoff frequency; high electron mobility transistor; hybrid wideband balanced amplifier; midband noise figure; noise figure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860514
Filename
4256717
Link To Document