Title :
Wideband HEMT balanced amplifier
Author_Institution :
General Electric Company, Electronics Laboratory, Syracuse, USA
Abstract :
The high electron mobility transistor (HEMT) has demonstrated great potential for high-gain and low-noise applications, achieving a noise figure and current gain cutoff frequency fT superior to that of the GaAs MESFET. The letter presents the practical use of an HEMT in a hybrid wideband balanced amplifier covering 8.5 to 16 GHz producing 9.7 ± 0.5 dB gain and 2.6 dB midband noise figure. The performance is also compared to a GaAs MESFET stage.
Keywords :
high electron mobility transistors; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; wideband amplifiers; 8.5 GHz to 16 GHz; GaAs MESFET; current gain cutoff frequency; high electron mobility transistor; hybrid wideband balanced amplifier; midband noise figure; noise figure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860514
