DocumentCode

1024396

Title

Migration rates of alkali ions in thermally-grown SiO2films

Author

Logan, Jeremy S. ; Kerr, D.R.

Volume

12

Issue

9

fYear

1965

fDate

9/1/1965 12:00:00 AM

Firstpage

503

Lastpage

503

Keywords

Diodes; Electrons; Gallium arsenide; Gunn devices; III-V semiconductor materials; Impurities; Laboratories; Microwave devices; Radar scattering; Telephony;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1965.15549

Filename

1474013