• DocumentCode
    1024421
  • Title

    Monolithic integration of GaAs photoconductors with a field-effect transistor

  • Author

    Lam, D.K.W. ; Syrett, B.A. ; Stubbs, M.G.

  • Author_Institution
    Communication Research Centre, Department of Communications, Ottawa, Canada
  • Volume
    22
  • Issue
    14
  • fYear
    1986
  • Firstpage
    753
  • Lastpage
    754
  • Abstract
    A one-stage monolithic integration of a tandem pair of GaAs photoconductors (PCs) with a field-effect transistor (FET) is reported. The PC-FET exhibits a bandwidth in excess of 1 GHz and a gain of 6 dB at midband. A very low noise figure of ~3 dB in the FET is also achieved.
  • Keywords
    III-V semiconductors; integrated optoelectronics; monolithic integrated circuits; GaAs photoconductors; bandwidth; field-effect transistor; gain; noise figure; one-stage monolithic integration; tandem pair;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860518
  • Filename
    4256721
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024421