DocumentCode :
1024453
Title :
A model for the charge motion and instability in the metal-silicon oxide-silicon structure
Author :
Hofstein, S.R.
Volume :
12
Issue :
9
fYear :
1965
fDate :
9/1/1965 12:00:00 AM
Firstpage :
504
Lastpage :
504
Keywords :
Electric variables measurement; Energy measurement; Laboratories; Motion measurement; Oxidation; Pollution measurement; Silicon; Temperature; Voltage; Water pollution;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1965.15555
Filename :
1474019
Link To Document :
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