• DocumentCode
    1024465
  • Title

    Transient effects in M-O-S structures induced by changes of temperature and of the ambient atmosphere

  • Author

    Lehovec, K. ; Ho, Paul ; Fedotowsky, L.

  • Volume
    12
  • Issue
    9
  • fYear
    1965
  • fDate
    9/1/1965 12:00:00 AM
  • Firstpage
    504
  • Lastpage
    504
  • Keywords
    Atmosphere; Energy states; Equations; Laboratories; MOS devices; Oxidation; Silicon; Surface treatment; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1965.15556
  • Filename
    1474020