Title :
The influence of oxidation and high temperature treatment on MOS device characteristics
fDate :
9/1/1965 12:00:00 AM
Keywords :
Annealing; Equations; Laboratories; MOS devices; Oxidation; Silicon; Surface contamination; Surface treatment; Temperature; Water pollution;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15557
