Title :
Promotion of practical SIMOX technology by the development of a 100 mA-class high-current oxygen implanter
Author :
Izumi, Kiyotaka ; Omura, Y. ; Nakashima, S.
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi Laboratories, Atsugi, Japan
Abstract :
A high-current oxygen implanter which has an acceleration energy of 200 keV and a beam current of 100 mA has been developed. This implanter has been used to form SIMOX wafers, on which p- and n-channel MOSFETs have been fabricated on a trial basis. Good electrical characteristics have been achieved with these MOSFETs. It has been shown that a 100 mA-class high-current oxygen implanter can promote SIMOX technology in a practical way.
Keywords :
CMOS integrated circuits; integrated circuit technology; ion implantation; oxygen; CMOS; MOSFETs; SIMOX technology; SIMOX wafers; acceleration energy; beam current; electrical characteristics; high current O implanter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860532
