Title :
New wideband GaAs travelling-wave device: linear gate transistor
Author :
Holden, A.J. ; Davies, I. ; Medhurst, P. ; Oxley, C.H.
Author_Institution :
Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK
Abstract :
A new device called the linear the gate transistor (LGT) is described which promises in excess of 20 GHz flat-band performance in a single compact structure. The LGT is designed and modelled using a unique software package developed for all travelling-wave structures. Results from a prototype LGT are reported.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; solid-state microwave devices; 20 GHz flat-band performance; GaAs travelling-wave device; LGT; SHF; linear gate transistor; modelled; prototype; semiconductors; single compact structure; software package; travelling-wave structures; wideband;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860533
