• DocumentCode
    1024567
  • Title

    New wideband GaAs travelling-wave device: linear gate transistor

  • Author

    Holden, A.J. ; Davies, I. ; Medhurst, P. ; Oxley, C.H.

  • Author_Institution
    Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK
  • Volume
    22
  • Issue
    15
  • fYear
    1986
  • Firstpage
    777
  • Lastpage
    778
  • Abstract
    A new device called the linear the gate transistor (LGT) is described which promises in excess of 20 GHz flat-band performance in a single compact structure. The LGT is designed and modelled using a unique software package developed for all travelling-wave structures. Results from a prototype LGT are reported.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; solid-state microwave devices; 20 GHz flat-band performance; GaAs travelling-wave device; LGT; SHF; linear gate transistor; modelled; prototype; semiconductors; single compact structure; software package; travelling-wave structures; wideband;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860533
  • Filename
    4256737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024567