Title :
94 GHz transistor amplification using an HEMT
Author :
Smith, P.M. ; Chao, P.C. ; Duh, K.H.G. ; Lester, L.F. ; Lee, B.R.
Author_Institution :
General Electric Company, Electronics Laboratory, Syracuse, USA
Abstract :
Transistor amplification at 94 GHz has been demonstrated for the first time. A single-stage amplifier employing a high-electron-mobility transistor (HEMT) exhibits a small-signal gain of 3.6 dB and an output power of 3.4 mW with 2 dB gain.
Keywords :
high electron mobility transistors; microwave amplifiers; solid-state microwave devices; 94 GHz transistor amplification; EHF; HEMT; MM-wave; high-electron-mobility transistor; microwave amplifiers; output power; single-stage amplifier; small-signal gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860535
