• DocumentCode
    1024582
  • Title

    94 GHz transistor amplification using an HEMT

  • Author

    Smith, P.M. ; Chao, P.C. ; Duh, K.H.G. ; Lester, L.F. ; Lee, B.R.

  • Author_Institution
    General Electric Company, Electronics Laboratory, Syracuse, USA
  • Volume
    22
  • Issue
    15
  • fYear
    1986
  • Firstpage
    780
  • Lastpage
    781
  • Abstract
    Transistor amplification at 94 GHz has been demonstrated for the first time. A single-stage amplifier employing a high-electron-mobility transistor (HEMT) exhibits a small-signal gain of 3.6 dB and an output power of 3.4 mW with 2 dB gain.
  • Keywords
    high electron mobility transistors; microwave amplifiers; solid-state microwave devices; 94 GHz transistor amplification; EHF; HEMT; MM-wave; high-electron-mobility transistor; microwave amplifiers; output power; single-stage amplifier; small-signal gain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860535
  • Filename
    4256739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024582