Title :
InP/InGaAs double heterostructure bipolar transistors grown by MBE
Author :
Schuitemaker, P. ; Claxton, P.A. ; Roberts, Jeffrey S. ; Plant, T.K. ; Houston, P.A.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Double heterostructure bipolar transistors have been fabricated on InP/InGaAs MBE material. Current gains of up to 80 have been observed in the emitter-up configuration. The devices were fabricated using two diffusion techniques and selective etching to contact the base.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor technology; DH bipolar transistors; InP/InGaAs; MBE; base contact; current gain; diffusion techniques; double heterostructure bipolar transistors; emitter-up configuration; selective etching; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860536
