DocumentCode :
1024629
Title :
Negative resistance behavior in double injection structures
Author :
Marsh, O.J. ; Baron, R. ; Mayer, J.W.
Volume :
12
Issue :
9
fYear :
1965
fDate :
9/1/1965 12:00:00 AM
Firstpage :
506
Lastpage :
506
Keywords :
Charge carrier density; Delay effects; Energy storage; Gallium arsenide; Laser tuning; Nitrogen; Optical pulses; Power lasers; Stimulated emission; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1965.15572
Filename :
1474036
Link To Document :
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